inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor bd949f/951f/953f/955f description dc current gain- : h fe = 40(min)@ i c = 500ma complement to type bd950f/952f/954f/956f applications designed for power amplifier and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage bd949f 60 v BD951F 80 bd953f 100 bd955f 120 v ceo collector-emitter v oltage bd949f 60 v BD951F 80 bd953f 100 bd955f 120 v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i cm collector current-peak 8 a p c collector power dissipation @ t c =25 22 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.12 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor bd949f/951f/953f/955f electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage bd949f i c = 100ma ; i b = 0 60 v BD951F 80 bd953f 100 bd955f 120 v ce( sat ) collector-emitter saturation voltage i c = 2a; i b = 0.2a 1.0 v v be( on ) base-emitter on voltage i c = 2a; v ce = 4v 1.4 v i cbo collector cutoff current v cb = v cbomax ; i e = 0 v cb = 1 / 2 v cbomax ; i e = 0,t j =150 0.05 1 ma i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 0.2 ma h fe-1 dc current gain i c = 500ma ; v ce = 4v 40 h fe-2 dc current gain i c = 2a ; v ce = 4v 20 f t current-gainbandwidth product i c = 500ma ; v ce = 4v 3 mhz switching times t on turn-on time i c = 1.0a; i b1 = -i b2 = 0.1a 0.3 s t off turn-off time 1.5 s
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